FT-300-12-600CW 12A TRIAC 600V Snubberless AC Switching Component TO-220AB

FT-300-12-600CW 12A TRIAC

DESCRIPTION:

The FT-300-12-600CW triac is suitable for general purposeAC

switching. It can be used as an ON/OFF function in applications

such as heating regulation, induction motor starting circuits, for

phase control operation in light dimmers, motor speed controllers.

FT-300-12-600CW snubberless triac is especially recommended for

use on inductive loads. By using an internal ceramic pad,

FT-300-12-600CW provides a rated insulation voltage of 2500

VRMS, complying with ULstandards (File ref: E252906).

MAIN FEATURES

Symbol Value Unit

I 12 A

T(RMS)

V /V 600 V

DRM RRM

I 35/35/35 mA

GTⅠ/Ⅱ/Ⅲ

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Unit

Storage junction temperature range T -40-150 ℃

stg

Operating junction temperature range T -40-125 ℃

j

Repetitive peak off-state voltage (T=25℃) V 600 V

j DRM

Repetitive peak reverse voltage (T=25℃) V 600 V

j RRM

RMS on-state current (T ≤86℃) I 12 A

C T(RMS)

Non repetitive surge peak on-state current

120

(full cycle , t =20ms , T=25℃)

p j

I

TSM

A

Non repetitive surge peak on-state current

132

(full cycle , t =16.6ms , T=25℃)

p j

I2t value for fusing (t =10ms , T=25℃) I2t 72 A2s

p j

Critical rate of rise of on-state current

dI/dt 100 A/μs

(I =2×I , f=100Hz , T=125℃)

G GT j

Peak gate current (t =20μs , T=125℃) I 4 A

p j GM

Average gate power dissipation (T=125℃) P 0.5 W

j G(AV)

V 3.06

1 /5

Symbol	Value	Unit
I T(RMS)	12	A
V /V DRM RRM	600	V
I GTⅠ/Ⅱ/Ⅲ	35/35/35	mA

Parameter	Symbol	Value	Unit
Storage junction temperature range	T stg	-40-150	℃
Operating junction temperature range	T j	-40-125	℃
Repetitive peak off-state voltage (T=25℃) j	V DRM	600	V
Repetitive peak reverse voltage (T=25℃) j	V RRM	600	V
RMS on-state current (T ≤86℃) C	I T(RMS)	12	A
Non repetitive surge peak on-state current (full cycle , t =20ms , T=25℃) p j	I TSM	120	A
Non repetitive surge peak on-state current (full cycle , t =16.6ms , T=25℃) p j		132
I2t value for fusing (t =10ms , T=25℃) p j	I2t	72	A2s
Critical rate of rise of on-state current (I =2×I , f=100Hz , T=125℃) G GT j	dI/dt	100	A/μs
Peak gate current (t =20μs , T=125℃) p j	I GM	4	A
Average gate power dissipation (T=125℃) j	P G(AV)	0.5	W

Peak gate power P 10 W

GM

Peak pulse voltage

V 4.5 kV

(T=25℃; non-repetitive,off-state ;FIG.7) pp

j

ELECTRICAL CHARACTERISTICS (T=25℃ unless otherwise specified)

j

Symbol Test Condition Quadrant Value Unit

I Ⅰ-Ⅱ-Ⅲ MAX. 35 mA

GT

V

D

=12V R

L

=33Ω

V Ⅰ-Ⅱ-Ⅲ MAX. 1 V

GT

V =V T =125℃

V

GD

D DRM j Ⅰ-Ⅱ-Ⅲ MIN. 0.2 V

R =3.3KΩ

L

Ⅰ-Ⅲ 50

I L I G =1.2I GT MAX. mA

Ⅱ 60

I I =500mA MAX. 35 mA

H T

dV/dt V =400V Gate Open T =125℃ MIN. 1000 V/μs

D j

(dI/dt)c (dV/dt)c =20V/μs Tj=125℃ MIN. 10 A/ms

t

on I =40mAI =200mAI =20mA

3

G A R

TYP. μs

T=25℃

t

off

j 30

STATIC CHARACTERISTICS

Symbol Parameter Value(MAX.) Unit

V I =17At =380μs T=25℃ 1.5 V

TM TM p j

VTO Threshold voltage T

j

=125℃ 0.77 V

RD Dynamic resistance T

j

=125℃ 35 mΩ

I T=25℃ 5 μA

DRM j

V =V V =V

D DRM R RRM

I T=125℃ 0.4 mA

RRM j

THERMAL RESISTANCES

Symbol Parameter Value Unit

R junction to case (AC) 2.3 ℃/W

th(j-c)

R junction to ambient (AC) 60 ℃/W

th(j-a)

V 3.06

2 /5

Peak gate power	P GM	10	W
Peak pulse voltage (T=25℃; non-repetitive,off-state ;FIG.7) j	V pp	4.5	kV

Symbol	Test Condition	Quadrant	Value		Unit
I GT	V =12V R =33Ω D L	Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅱ-Ⅲ	MAX.	35	mA
V GT			MAX.	1	V
V GD	V =V T =125℃ D DRM j R =3.3KΩ L	Ⅰ-Ⅱ-Ⅲ	MIN.	0.2	V
I L	I =1.2I G GT	Ⅰ-Ⅲ Ⅱ	MAX.	50	mA
				60
I H	I =500mA T		MAX.	35	mA
dV/dt	V =400V Gate Open T =125℃ D j		MIN.	1000	V/μs
(dI/dt)c	(dV/dt)c =20V/μs Tj=125℃		MIN.	10	A/ms
t on	I =40mAI =200mAI =20mA G A R T=25℃ j		TYP.	3	μs
t off				30

Symbol	Parameter		Value(MAX.)	Unit
V TM	I =17At =380μs TM p	T=25℃ j	1.5	V
VTO	Threshold voltage	T=125℃ j	0.77	V
RD	Dynamic resistance	T=125℃ j	35	mΩ
I DRM	V =V V =V D DRM R RRM	T=25℃ j	5	μA
I RRM		T=125℃ j	0.4	mA

Symbol	Parameter	Value	Unit
R th(j-c)	junction to case (AC)	2.3	℃/W
R th(j-a)	junction to ambient (AC)	60	℃/W

FIG.1 Maximum power dissipation versus RMS FIG.2: RMS on-state current versus case

on-state current temperature

25 P(W) 14 I T(RMS) (A)

86℃

12

20

10

15

8

10 6

4

5

2

0 0

0 2 4 6 8 10 12 14 0 25 50 75 100 125

I T(RMS) (A) T C (℃)

FIG.3: Surge peak on-state current versus FIG.4: On-state characteristics

number of cycles

I (A) I (A)

140 TSM TM

T c =25℃,t p =20ms,one cycle,sine Tj=25℃typ

120 100

Tj=25℃max

100

Tj=125℃typ

80

60 10

40

20

0 1

1.E+0 1.E+1 1.E+2 1.E+3 1.E+4 1.E+5 0 0.5 1 1.5 2 2.5 3 3.5

Number of cycles V TM (V)

FIG.5: Non-repetitive surge peak on-state current FIG.6: Relative variations of gate trigger

for a sinusoidal pulse with width t <20ms, and current, holding current and latching

p

corresponding value of I2t (dI/dt<100A/μs) current versus junction temperature

I TSM (A),I2t(A2s) 3 I GT ,I H ,I L (Tj)/I GT ,I H ,I L (T j =25℃)

IGT(I/II)&IH

1000

IGT(III)

I 2.5

dI/dt TSM IL

2

100

I2t 1.5

10 1

0.5

1 0

0.01 0.1 1 10 -40 -20 0 20 40 60 80 100 120 140

t p (ms) T j (℃)

V 3.06

3 /5

P(	W)
									I T(RM		(A) S)
25									14
									12														86℃
20									10
15									8
10									6 4
5									2
0									0
0	2	4 6	8 10	12	14				0			2		5			50				75		100					125
		I	(A) T(RMS)																T( C	℃)
FIG.3: Surge peak on-state current versus number of cycles									F	IG	.4	: O		n-	sta	te	ch		ar	acte	rist	ics
I 140	(A) TSM	T= c	25℃,t=20ms,one p	cycle,sine						I ( TM	A)	Tj=2